Photoluminescence and bowing parameters of InAsSb / InAs multiple quantum wells grown by molecular beam epitaxy

@inproceedings{Liu2006PhotoluminescenceAB,
  title={Photoluminescence and bowing parameters of InAsSb / InAs multiple quantum wells grown by molecular beam epitaxy},
  author={Po-Wei Liu and Gene Tsai and Hao Lina and A. Krier},
  year={2006}
}
Detailed studies are reported on the photoluminescence of InAsSb/ InAs multiple quantum wells grown by molecular beam epitaxy on InAs substrates with the Sb mole fraction ranging from 0.06 to 0.13. From 4 K photoluminescence the band alignment was determined to be staggered type II. By comparing the emission peak energies with a transition energy calculation it was found that both the conduction and valence bands of InAsSb alloy exhibit some bowing. The bowing parameters were determined to be… CONTINUE READING

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