Photogalvanic effects in HgTe quantum wells

@article{Wittmann2007PhotogalvanicEI,
  title={Photogalvanic effects in HgTe quantum wells},
  author={Bernhard Wittmann and R. Ravash and Harvey Diehl and S. N. Danilov and Z. D. Kvon and S. A. Tarasenko and E. L. Ivchenko and N Iu Mikhaĭlov and S. Dvoretsky and Wilhelm Prettl and S. D. Ganichev},
  journal={2007 Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics},
  year={2007},
  pages={773-774}
}
We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE. 

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Intense Terahertz Excitation of Semiconductors

  • S. D. Ganichev, W. Prettl
  • Oxford University Press
  • 2006
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