Photoemission study of electronic structure evolution across the metal–insulator transition of heavily B-doped diamond

@inproceedings{Okazaki2011PhotoemissionSO,
  title={Photoemission study of electronic structure evolution across the metal–insulator transition of heavily B-doped diamond},
  author={Hiroyuki Okazaki and Toshiyuki Arakane and Katsuaki Sugawara and Takafumi Sato and Takashi Takahashi and Takanori Wakita and Masaaki Hirai and Yuji Muraoka and Yoshihiko Takano and Satoshi Ishii and Shingo Iriyama and Hiroshi Kawarada and Takayoshi Yokoya},
  year={2011}
}
We studied the electronic structure evolution of heavily B-doped diamond films across the metal-insulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From high-temperature UPS, through which electronic states near the Fermi level (E(F)) up to similar to 5k(B)T can be observed (k(B) is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near E(F). Using another carrier concentration dependent UPS, we found… CONTINUE READING