# Photoemission-induced gating of topological insulators

@article{Kordyuk2011PhotoemissioninducedGO, title={Photoemission-induced gating of topological insulators}, author={Alexander A. Kordyuk and Timur K. Kim and Volodymyr B. Zabolotnyy and D. V. Evtushinsky and Martin Bauch and Christian Hess and Bernd B{\"u}chner and Helmuth Berger and Sergey V. Borisenko}, journal={Physical Review B}, year={2011}, volume={83}, pages={081303} }

The recently discovered topological insulators exhibit topologically protected metallic surface states which are interesting from the fundamental point of view and could be useful for various applications if an appropriate electronic gating can be realized. Our photoemission study of Cu-intercalated Bi2Se3 shows that the surface-state occupancy in this material can be tuned by changing the photon energy and understood as a photoemission-induced gating effect. Our finding provides an effective…

## 29 Citations

Trigger of the ubiquitous surface band bending in 3D topological insulators

- Physics
- 2017

The main scientific activity in the field of topological insulators (TIs) consists of determining their electronic structure by means of magneto-transport and electron spectroscopy with a view to…

ARPES experiment in fermiology of quasi-2D metals (Review Article)

- Physics
- 2014

Angle-resolved photoemission spectroscopy (ARPES) enables direct observation of the Fermi surface and underlying electronic structure of crystals, which are the basic concepts necessary to describe…

Persistent optical gating of a topological insulator

- PhysicsScience Advances
- 2015

Persistent, bidirectional optical control of the chemical potential of (Bi,Sb)2Te3 thin films grown on SrTiO3 is demonstrated and the gating effect generalizes to other thin-film materials, suggesting that these phenomena could provide Optical control of chemical potential in a wide range of ultrathin electronic systems.

Manipulating long-lived topological surface photovoltage in bulk-insulating topological insulators Bi2Se3 and Bi2Te3

- Physicsnpj Quantum Materials
- 2020

The appearance of topologically protected spin-momentum locked surface states in topological insulators gives rise to robust room temperature spin currents making them ideal candidates for the…

Tolerance of topological surface states towards magnetic moments: Fe on Bi2Se3.

- PhysicsPhysical review letters
- 2012

It is shown that the topological surface state reveals surface electron doping when the Fe is deposited at room temperature and hole doping with increased linearity when deposited at low temperature, in contradiction to current belief.

Quantum Capacitance in Topological Insulators

- PhysicsScientific reports
- 2012

This work reports on an experimental observation of Shubnikov-de Haas oscillations in quantum capacitance measurements, which originate from topological helical states, and demonstrates easy access to the surface states at relatively high temperatures up to 60 K.

Taking control of the surface electronic structure of 3D topological insulators

- Physics
- 2013

Topological insulators are a widely studied class of materials having properties different from ordinary matter. On their surface they host metallic states with a massless dispersion that is…

Mechanisms of scattering of surface electrons in topological insulators

- PhysicsLow Temperature Physics
- 2019

A unique feature of topological insulators is the presence of electronic topologically protected quasiparticle surface states that are exceptionally resistant to impurities; however, the scattering…

Synthesis and field emission properties of topological insulator Bi₂Se₃ nanoflake arrays.

- PhysicsNanotechnology
- 2012

X-ray photoelectron spectroscopy characterizations indicate that the rapid surface oxidation may prohibit the detection of the topological surface state and results in a low field emission current of the synthesized Bi(2)Se(3) nanoflake arrays.

Possible experimental realization of a basic Z2 topological semimetal in GaGeTe

- PhysicsAPL Materials
- 2019

We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state…

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