Photoelectrical characterization of a new generation diode having GaFeO3 interlayer

@inproceedings{Soylu2014PhotoelectricalCO,
  title={Photoelectrical characterization of a new generation diode having GaFeO3 interlayer},
  author={Murat Soylu and M. Cavaş and Ahmed A. Al-Ghamdi and Zarah H. Gafer and Farid El-Tantawy and F. Yakuphanoglu},
  year={2014}
}
Abstract In this work, we have systematically investigated the effects of illumination intensity on the electrical characteristics of GaFeO 3 /p-Si heterostructure. The current–voltage ( I – V ) measurements of the heterostructure based on GaFeO 3 thin film were performed in dark and under different illumination intensities. The photocurrent in the reverse biased I – V measurement is strongly sensitive to photo-illumination. The ideality factor ( n ) and zero-bias barrier height ( Φ b 0 ) were… CONTINUE READING