Photodiode quantum efficiency enhancement at 365 nm: optical and electrical.

@article{Booker1982PhotodiodeQE,
  title={Photodiode quantum efficiency enhancement at 365 nm: optical and electrical.},
  author={R L Booker and Jon Geist},
  journal={Applied optics},
  year={1982},
  volume={21 22},
  pages={3987-9}
}
In 1976, Lind and Zalewski reported changes in the quantum efficiency (QE) of silicon junction photodiodes upon exposure to UV radiation. One of the diodes showed a 25% increase in QE after 1-h exposure to 364-nm laser radiation having a beam power density of 4 mW/cm. The diode maintained its high QE after 4 h in the dark but returned to its original QE after several days. Attempts to repeat these results with an incident flux of 10 μW/cm showed no ef­ fect. In an attempt to explain this… CONTINUE READING

From This Paper

Figures, tables, and topics from this paper.
8 Citations
0 References
Similar Papers

Citations

Publications citing this paper.

Similar Papers

Loading similar papers…