Phosphorus molecules on Ge(001): a playground for controlled n-doping of germanium at high densities.

@article{Mattoni2013PhosphorusMO,
  title={Phosphorus molecules on Ge(001): a playground for controlled n-doping of germanium at high densities.},
  author={Giordano Mattoni and Wolfgang M. Klesse and G Capellini and Michelle Y Simmons and Giordano Scappucci},
  journal={ACS nano},
  year={2013},
  volume={7 12},
  pages={11310-6}
}
The achievement of controlled high n-type doping in Ge will enable the fabrication of a number of innovative nanoelectronic and photonic devices. In this work, we present a combined scanning tunneling microscopy, secondary ions mass spectrometry, and magnetotransport study to understand the atomistic doping process of Ge by P2 molecules. Harnessing the one… CONTINUE READING