Phenomenological Modeling of Memristive Devices

@inproceedings{MerrikhBayat2014PhenomenologicalMO,
  title={Phenomenological Modeling of Memristive Devices},
  author={Farshad Merrikh-Bayat and Britt Hoskins and Dmitri B. Strukov},
  year={2014}
}
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I–V relation at small non-disturbing electrical stresses, which is often the most critical range of operation for circuit modeling. While the choice of fitting functions is motivated by the switching and conduction mechanisms of particular titanium dioxide devices, the proposed modeling… CONTINUE READING
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