Phase change memory parameters: Effects of atomic transformations

Abstract

We discuss key PCM device parameters and their variations. In particular, we show how effects of atomic transformations result in unique device behaviors such as delay time, temporal changes of parameters, under-threshold and others. Concepts of nucleation switching, atomic double well potential and disordered glass structure are introduced to explain… (More)

10 Figures and Tables

Topics

  • Presentations referencing similar topics