Phase-Change and Redox-Based Resistive Switching Memories

@article{Wouters2015PhaseChangeAR,
  title={Phase-Change and Redox-Based Resistive Switching Memories},
  author={Dirk J. Wouters and Rainer Waser and Matthias Wuttig},
  journal={Proceedings of the IEEE},
  year={2015},
  volume={103},
  pages={1274-1288}
}
This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be discussed. 
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