Phase-Change and Redox-Based Resistive Switching Memories

  title={Phase-Change and Redox-Based Resistive Switching Memories},
  author={Dirk J. Wouters and Rainer Waser and Matthias Wuttig},
  journal={Proceedings of the IEEE},
This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be discussed. 
Highly Cited
This paper has 32 citations. REVIEW CITATIONS


Publications citing this paper.
Showing 1-10 of 21 extracted citations

Application of phase-change materials in memory taxonomy

Science and technology of advanced materials • 2017
View 3 Excerpts
Highly Influenced

Self-Referenced Read Methodology for EMs

2018 IEEE International Memory Workshop (IMW) • 2018
View 1 Excerpt

A Novel Analysis to Reduce Leakage Current in Charge Plasma Based TFET

2017 14th IEEE India Council International Conference (INDICON) • 2017
View 1 Excerpt


Publications referenced by this paper.
Showing 1-10 of 81 references

Unified reliability modeling of Ge-rich phase change memory for embedded applications

2013 IEEE International Electron Devices Meeting • 2013
View 13 Excerpts
Highly Influenced

10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation

2011 International Electron Devices Meeting • 2011
View 4 Excerpts
Highly Influenced

Realization of vertical resistive memory (VRRAM) using cost effective 3D process

2011 International Electron Devices Meeting • 2011
View 4 Excerpts
Highly Influenced

Overview of candidate device technologies for storage-class memory

IBM Journal of Research and Development • 2008
View 6 Excerpts
Highly Influenced

Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes

2012 Symposium on VLSI Technology (VLSIT) • 2012
View 3 Excerpts
Highly Influenced

19.7 A 16 Gb ReRAM with 200 MB/s write and 1 GB/s read in 27 nm technology

R. Fackenthal
IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, 2014, pp. 338–339. • 2014
View 1 Excerpt

1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb2Te3 super-lattice films

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers • 2014
View 2 Excerpts

Similar Papers

Loading similar papers…