Phase Change Memory

  title={Phase Change Memory},
  author={H.-S. Philip Wong and Simone Raoux and SangBum Kim and Jiale Liang and John P. Reifenberg and Bipin Rajendran and Mehdi Asheghi and Kenneth E. Goodson},
  journal={Proceedings of the IEEE},
In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical and thermal properties of phase change materials are surveyed with a focus on the scalability of the materials and their impact on device design. Innovations in the device structure, memory cell selector, and strategies for achieving multibit operation and 3-D, multilayer high-density memory arrays are described. The scaling properties of PCM are illustrated with recent experimental results using special… CONTINUE READING
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