Perspectives of Electric Field Controlled Switching in Perpendicular Magnetic Random Access

@article{Han2015PerspectivesOE,
  title={Perspectives of Electric Field Controlled Switching in Perpendicular Magnetic Random Access},
  author={Guchang Han and Hao Ye Meng and Jiancheng Huang and Vinayak Bharat Naik and Cheow Hin Sim and Michael Tran and Sze Ter Lim},
  journal={IEEE Transactions on Magnetics},
  year={2015},
  volume={51},
  pages={1-9}
}
Based on requirements for spin-transfer torque (STT)-magnetic random access memory (MRAM), fundamental challenges in current CoFeB- and MgO-based STT-MRAM with perpendicular magnetic anisotropy (PMA) are addressed when scaling down to sub-20 nm. Electric-field (EF)-induced PMA modulation has been proposed to significantly reduce the switching current. As EF alone is unable to induce the magnetization reversal but PMA reduction, additional mechanisms should be applied to realize EF switching. We… CONTINUE READING
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