Periodically changing morphology of the growth interface in Si, Ge, and GaP nanowires.

  title={Periodically changing morphology of the growth interface in Si, Ge, and GaP nanowires.},
  author={C-Y Wen and Jerry Tersoff and Karla Hillerich and Mark C. Reuter and Jung Hwan Park and Suneel Kodambaka and Eric A Stach and Francine Lafontaine Stephen M. Ross},
  journal={Physical review letters},
  volume={107 2},
Nanowire growth in the standard <111> direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows… CONTINUE READING
Highly Cited
This paper has 46 citations. REVIEW CITATIONS

From This Paper

Figures, tables, and topics from this paper.


Publications citing this paper.
Showing 1-10 of 23 extracted citations


Publications referenced by this paper.
Showing 1-7 of 7 references


F. Glas, J.-C. Harmand, G. Patriarche
Rev. Lett. 99, 146101 • 2007
View 7 Excerpts
Highly Influenced


A. D. Gamalski, C. Ducati, S. Hofmann, J. Phys
C 115, 4413 • 2011
View 3 Excerpts
Highly Influenced

Nano Lett

K. W. Schwarz, J. Tersoff
11, 316 • 2011
View 2 Excerpts


K. W. Schwarz, J. Tersoff
Rev. Lett. 102, 206101 • 2009


N. Wang, Y. Cai, R. Q. Zhang
Sci. Eng., R 60, 1 • 2008


K. A. Dick
Cryst. Growth Charact. Mater. 54, 138 • 2008


F. M. Ross, J. Tersoff, M. C. Reuter
Rev. Lett. 95, 146104 • 2005