Periodically changing morphology of the growth interface in Si, Ge, and GaP nanowires.

@article{Wen2011PeriodicallyCM,
  title={Periodically changing morphology of the growth interface in Si, Ge, and GaP nanowires.},
  author={C-Y Wen and Jerry Tersoff and Karla Hillerich and Mark C. Reuter and Jung Hwan Park and Suneel Kodambaka and Eric A Stach and Francine Lafontaine Stephen M. Ross},
  journal={Physical review letters},
  year={2011},
  volume={107 2},
  pages={
          025503
        }
}
Nanowire growth in the standard <111> direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows… CONTINUE READING
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