Performance projection and scalable loss model of SiC MOSFETs and SiC Schottky diodes

Abstract

Silicon Carbide (SiC) power semiconductor devices are expected to achieve better performance than silicon power devices in high-switching-frequency, high-power and high-temperature applications. Several commercial SiC MOSFETs and SiC Schottky diodes are available on the market, and SiC power devices with higher power ratings are expected in the future. This… (More)

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