Performance predictions of single-layer In-V double-gate n- and p-type field-effect transistors

@article{CarrilloNux00F1ez2016PerformancePO,
  title={Performance predictions of single-layer In-V double-gate n- and p-type field-effect transistors},
  author={Hamilton Carrillo-Nux00F1ez and Christian Stieger and Mathieu Luisier and Andreas Schenk},
  journal={2016 IEEE International Electron Devices Meeting (IEDM)},
  year={2016},
  pages={14.5.1-14.5.4}
}
Through ab-initio quantum transport simulations the logic performance of single-layer InAs, InN, InP, and InSb III-V compounds is analyzed in this paper for n- and p-type applications. The key findings are that (i) the low electron effective masses of all these materials lead to very similar and attractive ON-currents in n-type transistors, but cause a… CONTINUE READING