# Performance of a Kinetic Inductance Traveling-Wave Parametric Amplifier at 4 Kelvin: Toward an Alternative to Semiconductor Amplifiers

@article{Malnou2022PerformanceOA, title={Performance of a Kinetic Inductance Traveling-Wave Parametric Amplifier at 4 Kelvin: Toward an Alternative to Semiconductor Amplifiers}, author={Maxime Malnou and Jos{\'e} Aumentado and Michael R. Vissers and J. Wheeler and Johannes Hubmayr and J. N. Ullom and J Gao}, journal={Physical Review Applied}, year={2022} }

Most microwave readout architectures in quantum computing or sensing rely on a semiconductor amplifier at 4 K, typically a high-electron mobility transistor (HEMT). Despite its remarkable noise performance, a conventional HEMT dissipates several milliwatts of power, posing a practical challenge to scale up the number of qubits or sensors addressed in these architectures. As an alternative, we present an amplification chain consisting of a kinetic-inductance traveling-wave parametric amplifier…

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