Performance of a Fast Binary Readout CMOS Active Pixel Sensor Chip Designed for Charged Particle Detection

@article{Degerli2006PerformanceOA,
  title={Performance of a Fast Binary Readout CMOS Active Pixel Sensor Chip Designed for Charged Particle Detection},
  author={Y. Degerli and M. Besançon and A. Besson and G. Claus and G. Deptuch and W. Duliński and Nicolas Fourches and M. Goffe and A. Himmi and Y. Li and P. Lutz and F. Orsini and M. Szelezniak},
  journal={IEEE Transactions on Nuclear Science},
  year={2006},
  volume={53},
  pages={3949-3955}
}
We report on the performance of the MIMOSA8 (HiMAPS1) chip. The chip is a 128times32 pixels array where 24 columns have discriminated binary outputs and eight columns analog test outputs. Offset correction techniques are used extensively in this chip to overcome process related mismatches. The array is divided in four blocks of pixels with different conversion factors and is controlled by a serially programmable sequencer. MIMOSA8 is a representative of the CMOS sensors development option… Expand
Development of Binary Readout CMOS Monolithic Sensors for MIP Tracking
Recently, CMOS Monolithic Active Pixels Sensors (MAPS) have become strong candidates for pixel detectors used in high energy physics experiments. A very good spatial resolution lower than 5 mum canExpand
Development of binary readout CMOS monolithic sensors for MIP tracking
Recently, CMOS monolithic active pixels sensors (MAPS) have become strong candidates for pixel detectors used in high energy physics experiments. A very good spatial resolution can be obtained withExpand
A multi-channel integrated readout circuit chip for small capacitance sensors
The design, fabrication, and test results of a multi-channel integrated readout circuit (MIROC) mixed-signal ASIC for low capacitance (<;10pF) solid state sensors arrays are presented in thisExpand
Design of fundamental building blocks for fast binary readout CMOS sensors used in high-energy physics experiments
In this paper, design details of key building blocks for fast binary readout CMOS monolithic active pixel sensors developed for charged particle detection are presented. Firstly, an all-NMOS pixelExpand
Intermediate digital chip sensor for the EUDET-JRA1 high resolution beam telescope
A high resolution beam telescope, based on CMOS Monolithic Active Pixels Sensors (MAPS), is being developed within the EUDET collaboration, a coordinated detector R&D program for a futureExpand
Monolithic pixel sensors for fast particle trackers in a quadruple well CMOS technology
  • S. Zucca, L. Gaioni, +6 authors F. Giorgi
  • Physics
  • 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)
  • 2012
The Apsel4well monolithic active pixel sensor (MAPS) chip prototype is meant as an upgrade solution for the Layer0 of the SuperB silicon vertex tracker. The design is based on a 180 nm CMOS processExpand
A vertically integrated 3D CMOS MAPS with in-pixel digital memory and delayed readout
TLDR
A novel 3D integrated rolling shutter mode binary pixel architecture, RSBPix (Rolling Shutter Binary PIXel), for charged particle tracking is presented, which allows to overcome process related mismatches of transistors and is compatible with low-voltage operation. Expand
Design of a low power high speed auto-zeroed column-level ADC for data readout of CMOS APS based vertex detector
CMOS active pixel sensors have been proved to be promising technique for next generation vertex detector. As a good spatial resolution is required by the vertex detector, a column-based fully offsetExpand
Development of a novel pixel-level signal processing chain for fast readout 3D integrated CMOS pixel sensors
Abstract In order to resolve the inherent readout speed limitation of traditional 2D CMOS pixel sensors, operated in rolling shutter readout, a parallel readout architecture has been developed byExpand
Intermediate Digital Monolithic Pixel Sensor for the EUDET High Resolution Beam Telescope
A high resolution beam telescope, based on CMOS Monolithic Active Pixels Sensors (MAPS), is being developed under the EUDET collaboration, a coordinated detector R&D program for a futureExpand
...
1
2
3
4
...

References

SHOWING 1-9 OF 9 REFERENCES
Low-power autozeroed high-speed comparator for the readout chain of a CMOS monolithic active pixel sensor based vertex detector
Future high energy physics experiments will require the development of a linear collider in the TeV region such as TESLA. Because of physics requirements it will be necessary to make precision vertexExpand
A fast monolithic active pixel sensor with pixel-level reset noise suppression and binary outputs for charged particle detection
In order to develop precision vertex detectors for the future linear collider, fast monolithic active pixel sensors are studied. Standard CMOS 0.25 /spl mu/m digital process is used to design a testExpand
Design and testing of monolithic active pixel sensors for charged particle tracking
TLDR
A monolithic active pixel sensor (MAPS) for charged particle tracking based on a novel detector structure was proposed, simulated, fabricated and tested and yielded a low cost, high resolution and thin detecting device. Expand
A submicron precision silicon telescope for beam test purposes
Abstract A precise and compact silicon microstrip detector telescope designed to provide reference information for charged particle tracks has been constructed. First operation results are presented.Expand
Physics case and challenges for the Vertex Tracker at future high energy e+e− linear colliders
Abstract The physics programme of high energy e + e − linear colliders relies on the accurate identification of fermions in order to study in detail the profile of the Higgs boson, search for newExpand
The Case for a 500 GeV e+e- Linear Collider
Several proposals are being developed around the world for an e+e- linear collider with an initial center of mass energy of 500 GeV. In this paper, we will discuss why a project of this type deservesExpand
The Case for a 500
  • GeV e e Linear Collider Jul
  • 2000
Development of CMOS sensors adapted to the vertex detector requirements
  • presented at the LCWS’06, Bangalore, India, Mar. 2006.
  • 2006
Intra-pixel reset noise cancellation
  • Proc. 2001 IEEE Workshop on Charge Coupled Devices Adv. Image Sens., Lake Tahoe, NV, Jun. 2001, pp. 153–156.
  • 2001