Performance of a 12GHz monolithic microwave distributed oscillator in 1.2V 0.18/spl mu/m CMOS with a new simple design technique for frequency changing

@article{Bhattacharyya2005PerformanceOA,
  title={Performance of a 12GHz monolithic microwave distributed oscillator in 1.2V 0.18/spl mu/m CMOS with a new simple design technique for frequency changing},
  author={Kalyan Bhattacharyya and T. H. Szymanski},
  journal={The 2005 IEEE Annual Conference Wireless and Micrwave Technology, 2005.},
  year={2005},
  pages={174-177}
}
A monolithic distributed oscillator (DO) is designed and fabricated using an n-FET-based Traveling Wave Amplifier (TWA) [1], but with coplanar waveguides (CPW) and a proposed coplanar structure called a ‘folded CPW’. Experimental measurements are reported for the first time using a standard 0.18μm CMOS technology, with a bias of 1.8V. The oscillator operates at 12.0GHz with 5.77dbm gain as shown in Fig. 2 and will be called as OSC-1. The measured phase noise is –115dBc/Hz at 1MHz offset. The… CONTINUE READING
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