Performance of InP IGFET's fabricated with a virtual self-aligned process

Abstract

A "virtual" self-aligned, ion implantation process for fabricating IGFETs has been developed. N-channel IGFETs fabricated in semi-insulating InP substrates with this process show: (1) square-law characteristics, (2) an inverse-relationship between transconductance (g<inf>m</inf>) and gate length (<tex>L</tex>), g<inf>m</inf>ċ<tex>L</tex>≈ 6 mS ċ µm, and (3… (More)

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