Performance improvement of composition-graded AlGaAsSb/InP double heterojunction bipolar transistors

@article{Wu2009PerformanceIO,
  title={Performance improvement of composition-graded AlGaAsSb/InP double heterojunction bipolar transistors},
  author={Bing-Ruey Wu and Martin W. Dvorak and Patrick Colbus and Tom Low and Don D'Avanzo},
  journal={2009 IEEE International Conference on Indium Phosphide & Related Materials},
  year={2009},
  pages={20-23}
}
Compositional graded base Al<inf>x</inf>Ga<inf>1−x</inf>AsSb/InP DHBT is demonstrated to show DC current gain of ∼100 with 300Å base and base sheet resistance of 1000Ω/□. The improvement is more than 50% compared to uniform base GaAsSb/InP DHBT with the same base thickness and sheet resistance.