Performance evaluation of novel low leakage Double-gate FinFET device at sub-22nm with LaAlO3 high-k gate oxide and TiN metal gate using quantum modeling

The impact of metal gate work function on the device performance of 22 nm Double-gate FinFET with SiO2 and high-k gate oxide LaAlO3 is studied over a wide range of work functions. Matlab is used to calculate equivalent oxide thickness of high-k material LaAlO3 and simulations are carried out in PADRE device simulator. Quantum-mechanical effects such as Band… CONTINUE READING