Performance evaluation of ferroelectric MOSFETs based on Gibbs free energy

Abstract

A comprehensive simulation scheme based on Gibbs free energy calculation is developed to accurately evaluate the device performance of ferroelectric MOSFETs. Its operation region is captured based on the minimum energy point of the whole system involving FE, oxide layer, as well as atomic charge calculation in semiconductor materials. The MOS structure can… (More)

6 Figures and Tables

Topics

  • Presentations referencing similar topics