Performance evaluation and expected challenges of silicon carbide power MOSFETs for high voltage applications

  • Munaf Rahimo
  • Published 2016 in
    2016 European Conference on Silicon Carbide…

Abstract

This paper presents an overview of the main technical requirements of high voltage Silicon Carbide MOSFETs rated above 3300V when compared to the well-established requirements of Silicon IGBTs and diodes. Combined with a performance evaluation of existing 3300 V SiC MOSFET prototypes from ROHM, the paper will discuss the benefits and challenges facing these… (More)

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