Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer

@article{Zhang2011PerformanceEO,
  title={Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer},
  author={Yunyan Zhang and Y. A. Yin},
  journal={Applied Physics Letters},
  year={2011},
  volume={99},
  pages={221103}
}
The characteristics of the nitride-based blue light-emitting diode (LED) with an AlGaN/GaN superlattice (SL) electron-blocking layer (EBL) of gradual Al mole fraction are analyzed numerically and experimentally. The emission spectra, carrier concentrations in the quantum wells, energy band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results indicate that the LED with an AlGaN/GaN SL EBL of gradual Al mole fraction has a better hole injection efficiency… Expand
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