Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer

@article{Zhang2011PerformanceEO,
  title={Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer},
  author={Yunyan Zhang and Y. A. Yin},
  journal={Applied Physics Letters},
  year={2011},
  volume={99},
  pages={221103}
}
The characteristics of the nitride-based blue light-emitting diode (LED) with an AlGaN/GaN superlattice (SL) electron-blocking layer (EBL) of gradual Al mole fraction are analyzed numerically and experimentally. The emission spectra, carrier concentrations in the quantum wells, energy band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results indicate that the LED with an AlGaN/GaN SL EBL of gradual Al mole fraction has a better hole injection efficiency… Expand
View via Publisher
118 Citations
Highly Influential Citations
5
Background Citations
19
Methods Citations
11

118 Citations

Citation Type

Citation Type

Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer
Performance enhancement of an InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer
Performance Enhancement of Blue Light-Emitting Diodes With an Undoped AlGaN Electron-Blocking Layer in the Active Region
Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer
Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer
Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN-GaN-AlGaN electron blocking layer
Study of Blue InGaN/GaN Light-Emitting Diodes With n-AlGaN Layer as Space Layer and Without the P-AlGaN Electron Blocking Layer
Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers
Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier
...
1
2
3
4
5
...

References

SHOWING 1-9 OF 9 REFERENCES
Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer
Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers
Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes
Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer.
Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes
Increased Electrical Activity of Mg-Acceptors in AlxGa1-xN/GaN Superlattices
ENHANCED MG DOPING EFFICIENCY IN AL0.2GA0.8N/GAN SUPERLATTICES
Band parameters for nitrogen-containing semiconductors
Electron mobilities in modulation‐doped semiconductor heterojunction superlattices