Performance enhancement and reduction of short channel effects of nano-MOSFET by using graded channel engineering


The effect of the structure on electrical parameters of short channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors (DG MOSFETs) has been explored. To quantitatively assess the nanoscale DG MOSFET's characteristics, the On current(I<inf>on</inf>), Off current (I<inf>off</inf>), Sub threshold Swing (SS), Threshold voltage (V<inf>th</inf… (More)


18 Figures and Tables