Performance effects of two nitrogen incorporation techniques on TaN/HfO<sub>2</sub> and poly/HfO<sub>2</sub> MOSCAP and MOSFET devices


In the coming MOS generations, scaling trends will force the replacement of SiO/sub 2/ as the gate dielectric. Due to constraints - primarily high gate leakage current - SiO/sub 2/ will likely be replaced by a high dielectric constant or high-k material. This paper will attempt to address some of the high-k material concerns by presenting promising results… (More)


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