Performance and reliability of sub-100 nm MOSFETs with ultra thin direct tunneling gate oxides

@article{Xiang1998PerformanceAR,
  title={Performance and reliability of sub-100 nm MOSFETs with ultra thin direct tunneling gate oxides},
  author={Q. Xiang and G. Yeap and D. Bang and Miryeong Song and K. Ahmed and E. Ibok and M. Lin},
  journal={1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)},
  year={1998},
  pages={160-161}
}
  • Q. Xiang, G. Yeap, +4 authors M. Lin
  • Published 1998
  • Materials Science
  • 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)
Summary form only given. In this paper, we report the performance and reliability of sub-100 nm MOSFETs with ultra thin direct tunneling (DT) gate oxides. Both pure oxides and nitrided oxides down to 17 /spl Aring/ were investigated. For a L/sub g/ of about 90 nm (L/sub eff/ of about 50 nm), a drive current of larger than 1.0 mA//spl mu/m and a transconductance of higher than 800 mS/mm were obtained at room temperature. Channel electron transport properties were investigated. High field… Expand
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