Performance and reliability of strained SOI transistors for advanced planar FDSOI technology

Abstract

In this paper, we investigate the potential of strained Silicon-On-Insulator (sSOI) for the future advanced CMOS nodes. Strained FDSOI depicts a 30% higher performance in term of I<sub>ON</sub>/I<sub>OFF</sub> thanks to higher mobility. Changes in band structure reduce the gate leakage and devices depict superior HC reliability at same drive current. The… (More)
DOI: 10.1109/IRPS.2015.7112691

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Cite this paper

@article{Besnard2015PerformanceAR, title={Performance and reliability of strained SOI transistors for advanced planar FDSOI technology}, author={G. Besnard and Xavier Garros and Alexandre Subirats and François Andrieu and X. Federspiel and M. Rafik and W. Schwarzenbach and Gilles Reimbold and Olivier Faynot and Sorin Cristoloveanu}, journal={2015 IEEE International Reliability Physics Symposium}, year={2015}, pages={2F.1.1-2F.1.5} }