Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers

@article{Hull2008PerformanceAS,
  title={Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers},
  author={B. Vant Hull and J. J. Sumakeris and M. J. O'Loughlin and Qingchun Jon Zhang and Jim Richmond and A. R. Powell and E. A. Imhoff and K. D. Hobart and A. Rivera-Lopez and A. Hefner},
  journal={IEEE Transactions on Electron Devices},
  year={2008},
  volume={55},
  pages={1864-1870}
}
The forward and reverse bias dc characteristics, the long-term stability under forward and reverse bias, and the reverse recovery performance of 4H-SiC junction barrier Schottky (JBS) diodes that are capable of blocking in excess of 10 kV with forward conduction of up to 10 A at a forward voltage of less than 3.5 V (at 25degC) are described. The diodes show a positive temperature coefficient of resistance and a stable Schottky barrier height of up to 200degC. The diodes show stable operation… CONTINUE READING
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