Performance and Device Design Based on Geometry and Process Considerations for 14/16-nm Strained FinFETs

@article{Rezali2016PerformanceAD,
  title={Performance and Device Design Based on Geometry and Process Considerations for 14/16-nm Strained FinFETs},
  author={Fazliyatul Azwa Md Rezali and Nurul Aida Farhana Othman and Maisarah Mazhar and Sharifah Wan Muhamad Hatta and Norhayati Soin},
  journal={IEEE Transactions on Electron Devices},
  year={2016},
  volume={63},
  pages={974-981}
}
The multigated architecture of FinFETs appear attractive for continued CMOS scaling with the addition of discrete fin sizing that brings a new variable into the design. In this paper, a comprehensive 3-D simulation on 14/16-nm advanced-process FinFET under geometric and process considerations was presented in order to achieve the best possible performance with minimal penalty. Geometric designs, specifically the width and height of the fins as well as the channel lengths, were imposed onto the… CONTINUE READING