Performance analysis of the segment npn anode LIGBT

@article{Green2005PerformanceAO,
  title={Performance analysis of the segment npn anode LIGBT},
  author={D. W. Green and M. Sweet and K. E. Vershinin and S. Hardikar and E. M. Sankara Narayanan},
  journal={IEEE Transactions on Electron Devices},
  year={2005},
  volume={52},
  pages={2482-2488}
}
The performance of a high-voltage lateral insulated gate bipolar transistor (LIGBTs) with segmented n+p/n anode fabricated in junction isolation technology is experimentally investigated at both room and elevated temperatures. Detailed two dimensional numerical modeling of a vertical representation of the structure shows that significant electron current passes through the n/sup +/p/n segment of the anode region during the on-state and when devices are subjected to clamped inductive switching… CONTINUE READING

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