Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

@article{Liu2011PerformanceLO,
  title={Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors},
  author={Leitao Liu and Sreelakshmy Kumar and Yijian Ouyang and Jing Guo},
  journal={IEEE Transactions on Electron Devices},
  year={2011},
  volume={58},
  pages={3042-3047}
}
The performance limits of monolayer transition metal dichalcogenide ( MX<sub>2</sub>) transistors are examined with a ballistic MOSFET model. Using an ab initio theory, we calculate the band structures of 2-D transition MX<sub>2</sub>. We find the lattice structures of monolayer MX<sub>2</sub> remain the same as the bulk MX<sub>2</sub>. Within the ballistic regime, the performances of monolayer MX<sub>2</sub> transistors are better compared with those of the silicon transistors if a thin high… CONTINUE READING
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