Performance Improvement of N-Type $\hbox{TiO}_{x}$ Active-Channel TFTs Grown by Low-Temperature Plasma-Enhanced ALD

@article{Park2009PerformanceIO,
  title={Performance Improvement of N-Type \$\hbox\{TiO\}_\{x\}\$  Active-Channel TFTs Grown by Low-Temperature Plasma-Enhanced ALD},
  author={Jae-Woo Park and Dongyun Lee and Hakyoung Kwon and Seunghyup Yoo and Jongmoo Huh},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={739-741}
}
We report on performance improvement of n-type oxide-semiconductor thin-film transistors (TFTs) based on TiO<sub>x</sub> active channels grown at 250degC by plasma-enhanced atomic layer deposition. TFTs with as-grown TiO<sub>x</sub> films exhibited the saturation mobility (mu<sub>sat</sub>) as high as 3.2 cm<sup>2</sup>/V ldr s but suffered from the low on-off ratio (I<sub>ON</sub>/I<sub>OFF</sub>) of 2.0 times 10<sup>2</sup> ldr N<sub>2</sub>O plasma treatment was then attempted to improve I… CONTINUE READING

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