Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect

@article{Tsai2014PerformanceEO,
  title={Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect},
  author={Szu-Ping Tsai and H P Hsu and Che-Yang Chiang and Yung-Yi Tu and Chia-Hua Chang and Ting-En Hsieh and Huan-Chung Wang and Shih-Chien Liu and Edward Yi Chang},
  journal={IEEE Electron Device Letters},
  year={2014},
  volume={35},
  pages={735-737}
}
We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper… CONTINUE READING