Performance Characterization, Repeatability, and Consistency of X-Band GaN HEMTs Prior to High Temperature RF Reliability Testing

This paper reports the measured performance results on over 50 discrete GaN HEMTs mounted in high temperature RF/DC test fixtures capable of testing at > 250degC. The RF and DC parameters presented are prior to burn-in and accelerated life testing. Typical device performance variation from room temperature to 250degC is shown. The discussion focuses on the… CONTINUE READING