Performance Analysis of 10 kV, 100 A SiC Half-Bridge Power Modules †

  title={Performance Analysis of 10 kV, 100 A SiC Half-Bridge Power Modules †},
  author={Allen R. Hefner},
The DARPA Wide Bandgap Semiconductor Technology (WBGS) High Power Electronics (HPE) Phase II program is developing high-voltage, high-frequency SiC device and package technology needed to meet the specific program objectives for a 13.8 kV, 2.75 MVA Solid State Power Substation (SSPS) being developed by the DARPA WBGS-HPE Phase III program. In this paper, the performance of the HPE Phase II SiC device and package technology is evaluated and a physics-based electrothermal model is used to… CONTINUE READING


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