Per-Pixel Dark Current Spectroscopy Measurement and Analysis in CMOS Image Sensors

Abstract

A per-pixel dark current spectroscopy measurement and analysis technique for identifying deep-level traps in CMOS imagers is presented. The short integration time transfer gate subtraction experimental technique used to obtain accurate results is described and discussed. The activation energies obtained for molybdenum (≈0.3 eV), tungsten (≈0.37 eV), and the… (More)

11 Figures and Tables

Topics

  • Presentations referencing similar topics