Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization

@inproceedings{Davis2001PendeoepitaxialGO,
  title={Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization},
  author={Robert F. Davis and Thomas Gehrke and Kevin J. Linthicum and Tsvetanka S. Zheleva and Edward Alfred Preble and Pradeep Rajagopal and Christian A. Zorman and Mehran Mehregany},
  year={2001}
}
Abstract Monocrystalline GaN and Al x Ga 1− x N films have been grown via the pendeo-epitaxy (PE) 1 technique with and without Si 3 N 4 masks on GaN/AlN/6H-SiC(0 0 0 1) and GaN(0 0 0 1)/AlN(0 0 0 1)/3C-SiC(1 1 1)/Si(1 1 1) substrates using organometallic vapor phase deposition. Scanning and transmission electron microscopies were used to evaluate the external microstructures and the distribution of dislocations, respectively. The dislocation densities in the PE grown films were reduced at least… CONTINUE READING