Performance of GaAs MESFET Fabrication on Silicon Substrate using Epitaxial Lift-off Technique",Electron.Lett.,vol.26, no.22,pp.1865-1866,1990 P.Young, S.Alterovitz,R.Mena,E.Smith,"Microwave
- der Gaag, RF DC
A discrete peeled high electron mobility transistor (HEMT) device was integrated into a i0 GHz amplifier. The discrete HEMT device interconnects were made using photo patterned metal, stepping from the i0 mil alumina host substrate onto the 1.3 um thick peeled GaAs HEMT layer, eliminating the need for bond wires and creating a fully integrated circuit. Testing of devices indicate that the peeled device is not degraded by the peel off step but rather there is an improvement in the quantumwell carrier confinement. Circuit testii.g resulted in a maximum gain of 8.5 dB and a return loss minimum of -12 dB.