Patterning 100 nm features using deep-ultraviolet contact photolithography

@inproceedings{Goodberlet2000Patterning1N,
  title={Patterning 100 nm features using deep-ultraviolet contact photolithography},
  author={James Gregory Goodberlet},
  year={2000}
}
The extension of contact photolithography to pattern features at the 100 nm level, and below, is described. Isolated lines, nested L’s, and gratings with 100 nm linewidths are patterned using a conformable embedded-amplitude mask, a trilayer resist stack on the substrate, and a deep-ultraviolet radiation source having a wavelength of λ∼220 nm. A broad exposure latitude of ±21% for a linewidth control of ±10% is measured. Preliminary calculations indicate a practical resolution limit for the… CONTINUE READING