Passivation of intragrain defects by copper diffusion in p-type polycrystalline silicon

Abstract

2014 In order to passivate structural defects which degrade electronic properties, copper was diffused in p-type Wacker polysilicon at low temperature (~ 500 °C). Copper diffused samples exhibit homogeneous values of effective minority carrier diffusion lengths, which are practically as high as the higher values measured in the starting material. Light beam… (More)

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