Part I: High-Voltage MOS Device Design for Improved Static and RF Performance

@article{Gupta2015PartIH,
  title={Part I: High-Voltage MOS Device Design for Improved Static and RF Performance},
  author={Ankur Gupta and Mayank Shrivastava and Maryam Shojaei Baghini and Dinesh Kumar Sharma and Harald Gossner and V. Ramgopal Rao},
  journal={IEEE Transactions on Electron Devices},
  year={2015},
  volume={62},
  pages={3168-3175}
}
In this paper, for the first time, the key design parameters of a shallow trench isolation-based drain-extended MOS transistor are discussed for RF power applications in advanced CMOS technologies. The tradeoff between various dc and RF figures of merit (FoMs) is carefully studied using well-calibrated TCAD simulations. This detailed physical insight is used to optimize the dc and RF behavior, and our work also provides a design window for the improvement of dc as well as RF FoMs, without… CONTINUE READING

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