Parasitic BJT versus DIBL: Floating-body-related subthreshold characteristics of SOI NMOS device

Abstract

This paper reports the subthreshold characteristics of the SOI NMOS device considering the floating body effects. As verified by the experimentally measured data, as the channel length is scaled down from 1μm to 120nm, the subthreshold slope is steeper as a result of the dominance of the parasitic BJT in the thin film. For the channel length further scaled… (More)
DOI: 10.1109/ISICIR.2014.7029443

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