Parameter modeling of linearly doped double gate MOSFET with high-k dielectrics


In this paper an analytical expression of surface potential, threshold voltage and drain current for Single halo Dual Material Double Gate, Double Halo Dual Material Double Gate and Double Halo Triple Material Double Gate MOSFETs are formulated by applying Gauss' law to a rectangular box in the channel region, covering the total depth of depletion region… (More)


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