Parameter extraction procedure for high power SiC JFET

@article{Grekov2009ParameterEP,
  title={Parameter extraction procedure for high power SiC JFET},
  author={Alexander Grekov and Zhiyang Chen and Enrico Santi and Jerry L. Hudgins and Alan Mantooth and David Sheridan and Jeff Casady},
  journal={2009 IEEE Energy Conversion Congress and Exposition},
  year={2009},
  pages={1466-1471}
}
A practical parameter extraction procedure for power junction field effect transistor (JFET) is presented. The carrier mobility and carrier concentrations are very important parameters, strongly affecting the current capability and dynamic characteristics of the device for a given design. When modeling JFETs, values of these parameters usually are based on assumptions and given by a vendor in a range. As a result, model accuracy is compromised. In this paper, a step-by-step parameter extraction… CONTINUE READING

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