Parameter Identification for Semiconductor Diodes by LBIC Imaging

Abstract

Laser-beam-induced-current (LBIC) imaging is a nondestructive technique used for the characterization of the electrical structure within a semiconductor. In this paper a model is formulated for this technique using the standard drift-diffusion model, and, subsequently, an approximate version and its dual are derived for the study of the inverse problem. The… (More)
DOI: 10.1137/S003613990139249X

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