Paramagnetic defects and charge trapping in TaYOx gate dielectrics on strained-Si

Abstract

Charge trapping kinetics and chemical nature of defects present in Al/TaYO<inf>x</inf>/strained-Si/Si<inf>0.8</inf>Ge<inf>0.2</inf> MIS capacitors have been studied using internal photoemission and magnetic resonance. Reliability characteristics have been studied using CVS and CCS techniques. Results of electron paramagnetic resonance (EPR) and internal photoemission (IPE) studies on the charge trapping behavior are reported.

Cite this paper

@article{Majhi2009ParamagneticDA, title={Paramagnetic defects and charge trapping in TaYOx gate dielectrics on strained-Si}, author={Banshidhar Majhi and C. Mahata and M. K. Bera and M. K. Hota and Shikha Mallik and T. Das and C. K. Maiti}, journal={2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits}, year={2009}, pages={811-814} }