Parallelization of WENO-Boltzmann schemes for kinetic descriptions of 2 D semiconductor devices

Abstract

The parallelization of a direct WENO (Weighted Essentially Non-Oscillatory) solver for the 2D-spatial Boltzmann-Poisson system describing electron transport in Si-based semiconductor devices has been addressed. A non-parabolic Kane energy-band and elastic acoustic and inelastic non-polar optical phonon operators have been used [CGMS03A] in the physical… (More)

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