Parallel strings of IGBTs in short circuit transients: analysis of the parameter influence and experimental behavior

@article{Musumeci2002ParallelSO,
  title={Parallel strings of IGBTs in short circuit transients: analysis of the parameter influence and experimental behavior},
  author={Salvatore Musumeci and R. Pagano and Angelo Raciti and Ferruccio Frisina and Maurizio Melito},
  journal={IEEE 2002 28th Annual Conference of the Industrial Electronics Society. IECON 02},
  year={2002},
  volume={1},
  pages={555-560 vol.1}
}
In this paper the behavior analysis of parallel connection of IGBTs under short circuit conditions is presented. The issues of hard switching fault (HSF) and fault under load (FUL) short circuit types are faced by taking into account for the influence of the layout and gate driving parameters. The role of the temperature has been considered too in order to investigate how this quantity affects the IGBTs short circuit phenomenon. An analytical description of the FUL transient is introduced to… CONTINUE READING

Figures and Tables from this paper.

Citations

Publications citing this paper.
SHOWING 1-10 OF 19 CITATIONS

Space vector modulation extended to voltage source converters with multiple legs in parallel

  • 2007 European Conference on Power Electronics and Applications
  • 2007
VIEW 1 EXCERPT
CITES METHODS
HIGHLY INFLUENCED

Super junction MOSFET in power factor correction converters

  • 2017 AEIT International Annual Conference
  • 2017
VIEW 1 EXCERPT
CITES BACKGROUND

Synchronous rectification with low voltage MOSFETs in LLC converters

  • 2017 AEIT International Annual Conference
  • 2017
VIEW 1 EXCERPT
CITES BACKGROUND

Integrated power electronics modules: Electro-thermal modeling flow and stress conditions overview

  • 2014 AEIT Annual Conference - From Research to Industry: The Need for a More Effective Technology Transfer (AEIT)
  • 2014
VIEW 1 EXCERPT
CITES BACKGROUND

Static balancing of the collector current of IGBTs connected in parallel

  • IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society
  • 2014
VIEW 1 EXCERPT
CITES BACKGROUND

References

Publications referenced by this paper.
SHOWING 1-7 OF 7 REFERENCES

Behaviour of IGBT modules under short circuit conditions

  • Conference Record of the 2000 IEEE Industry Applications Conference. Thirty-Fifth IAS Annual Meeting and World Conference on Industrial Applications of Electrical Energy (Cat. No.00CH37129)
  • 2000

Schanen, “Influence of Stray Inductance on Current Sharing during Switching Transitions in Parallel Semiconductors

P. O. Jeannin, J.L.M. Akhabari
  • ConJ Proc. of EPE ’99,
  • 1999

Improvement of the Parallel Behavior of IGBT Connections by Gate Control Circuit

M. Melito, S. Musumeci, A. Raciti

    Influence of Stray Inductance on Current Sharing during Switching Transitions in Parallel Semiconductors ”

    M. Akhabari P. O. Jeannin, J. L. Schanen