POLYCRYSTALLINE SILICON FORMED BY ULTRAHIGH-VACUUM SPUTTERING SYSTEM

@inproceedings{Mishima1995POLYCRYSTALLINESF,
  title={POLYCRYSTALLINE SILICON FORMED BY ULTRAHIGH-VACUUM SPUTTERING SYSTEM},
  author={Yasuyoshi Mishima and Michiko Takei and Takuhiko Uematsu and Norihisa Matsumoto and Tatsuya Kakehi and U. Wakino and Masahiro Okabe},
  year={1995}
}
Using an ultrahigh‐vacuum (UHV) sputtering system, we could grow two new methods of polycrystalline silicon films. The one is as‐deposited polycrystalline silicon on glass at substrate temperatures under 500 °C. The other is solid‐phase‐crystallization by thermal annealing of as‐deposited amorphous silicon films in a UHV. As‐deposited polycrystalline silicon films were oriented to (220) and grain sizes were determined from half‐width of x‐ray diffraction to be about 40 nm. From the deposition… CONTINUE READING